PART |
Description |
Maker |
SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
|
Infineon
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SPU09P06PL SPD09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.25 SIPMOS Power-Transistor From old datasheet system
|
INFINEON[Infineon Technologies AG]
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BUZ30ASMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.13 Ohm, 21A, NL SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
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SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
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SPD50P03L |
Low Voltage MOSFETs - OptiMOS Power MOSFET, -30V, DPAK-5pin, Ron = 7m OptiMOS-P Power - Transistor
|
INFINEON[Infineon Technologies AG]
|
BUZ72 BUZ72SMD |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=0.2 Ohm, 10A, NL SIPMOS Power Transistor SIPMOS Power Transistor
|
Infineon Technologies AG
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
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BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL N-Channel SIPMOS Power Transistor
|
Infineon
|
SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30 Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
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INFINEON[Infineon Technologies AG]
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